Displays with all-metal electronics
    1.
    发明授权
    Displays with all-metal electronics 有权
    显示全金属电子

    公开(公告)号:US07005852B2

    公开(公告)日:2006-02-28

    申请号:US10806895

    申请日:2004-03-22

    IPC分类号: G01R33/02

    CPC分类号: G09G3/3486 G11C11/15

    摘要: A display device is described having a panel and all-metal electronics formed on a surface of the panel and operable to control operation of a plurality of basic visible elements associated with the panel.

    摘要翻译: 描述了一种显示装置,其具有在面板的表面上形成的面板和全金属电子器件,并且可操作以控制与面板相关联的多个基本可见元件的操作。

    All-metal three-dimensional circuits and memories
    2.
    发明授权
    All-metal three-dimensional circuits and memories 有权
    全金属三维电路和回忆

    公开(公告)号:US06992919B2

    公开(公告)日:2006-01-31

    申请号:US10731732

    申请日:2003-12-08

    IPC分类号: G11C11/00

    CPC分类号: G11C11/15

    摘要: A three-dimensional circuit and methods for fabricating such a circuit are described. The three-dimensional circuit includes a plurality of stacked levels on a substrate. Each level includes a plurality of all-metal circuit components exhibiting giant magnetoresistance and arranged in two dimensions, the circuit further includes an interconnect for providing interconnections between the circuit components on different ones of the plurality of levels.

    摘要翻译: 对三维电路及其制造方法进行说明。 三维电路在衬底上包括多个层叠层。 每个级包括多个显示巨磁电阻的全金属电路组件并且被布置成二维的电路,该电路还包括用于在多个电平中的不同电平上的电路部件之间提供互连的互连。

    High density giant magnetoresistive memory cell

    公开(公告)号:US06594175B2

    公开(公告)日:2003-07-15

    申请号:US09883672

    申请日:2001-06-18

    IPC分类号: G11C1115

    CPC分类号: G11C11/16 G11C11/5607

    摘要: A multi-layered memory cell is described having a plurality of magnetic layers, each of the magnetic layers being for magnetically storing one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer. The magnetic layers, the access lines, and the at least one keeper layer form a substantially closed flux structure.

    Low power magnetic anomaly sensor

    公开(公告)号:US06538437B2

    公开(公告)日:2003-03-25

    申请号:US09883644

    申请日:2001-06-18

    IPC分类号: G01R3309

    摘要: A transpinnor-based magnetometer is provided having four resistive elements exhibiting GMR in a bridge configuration. A bias current is applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors. An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states. The drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two. The output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other. The frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.

    All metal giant magnetoresistive memory
    5.
    发明授权
    All metal giant magnetoresistive memory 失效
    所有金属巨磁阻记忆

    公开(公告)号:US06483740B2

    公开(公告)日:2002-11-19

    申请号:US09883660

    申请日:2001-06-18

    IPC分类号: G11C1115

    摘要: A memory device is described which includes memory cells, access lines, and support electronics for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.

    摘要翻译: 描述了一种存储器件,其包括存储器单元,接入线路和支持电子设备,用于便于通过接入线路访问存储在存储器单元中的信息。 存储器单元和支持电子器件都包括显示巨磁电阻的多层薄膜结构。

    Transpinnor-based sample-and-hold circuit and applications
    9.
    发明授权
    Transpinnor-based sample-and-hold circuit and applications 有权
    基于转换器的采样和保持电路和应用

    公开(公告)号:US06738284B2

    公开(公告)日:2004-05-18

    申请号:US10107525

    申请日:2002-03-25

    IPC分类号: G11C1100

    CPC分类号: H03M7/004

    摘要: A sample-and-hold circuit is described which includes a network of thin-film elements in a bridge configuration. Each of the thin-film elements exhibits giant magnetoresistance. The circuit also includes a plurality of conductors inductively coupled to each of the thin-film elements for applying magnetic fields thereto. The circuit is operable using the plurality of conductors to sample and store a value corresponding to an input signal.

    摘要翻译: 描述了一种采样保持电路,其包括桥接配置中的薄膜元件网络。 每个薄膜元件都显示出巨大的磁阻。 电路还包括感应耦合到每个薄膜元件以用于向其施加磁场的多个导体。 该电路可以使用多个导体进行采样并存储对应于输入信号的值。