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公开(公告)号:US07005852B2
公开(公告)日:2006-02-28
申请号:US10806895
申请日:2004-03-22
申请人: Radu Andrei , Richard Spitzer , E. James Torok
发明人: Radu Andrei , Richard Spitzer , E. James Torok
IPC分类号: G01R33/02
CPC分类号: G09G3/3486 , G11C11/15
摘要: A display device is described having a panel and all-metal electronics formed on a surface of the panel and operable to control operation of a plurality of basic visible elements associated with the panel.
摘要翻译: 描述了一种显示装置,其具有在面板的表面上形成的面板和全金属电子器件,并且可操作以控制与面板相关联的多个基本可见元件的操作。
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公开(公告)号:US06992919B2
公开(公告)日:2006-01-31
申请号:US10731732
申请日:2003-12-08
申请人: Radu Andrei , Richard Spitzer , E. James Torok
发明人: Radu Andrei , Richard Spitzer , E. James Torok
IPC分类号: G11C11/00
CPC分类号: G11C11/15
摘要: A three-dimensional circuit and methods for fabricating such a circuit are described. The three-dimensional circuit includes a plurality of stacked levels on a substrate. Each level includes a plurality of all-metal circuit components exhibiting giant magnetoresistance and arranged in two dimensions, the circuit further includes an interconnect for providing interconnections between the circuit components on different ones of the plurality of levels.
摘要翻译: 对三维电路及其制造方法进行说明。 三维电路在衬底上包括多个层叠层。 每个级包括多个显示巨磁电阻的全金属电路组件并且被布置成二维的电路,该电路还包括用于在多个电平中的不同电平上的电路部件之间提供互连的互连。
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公开(公告)号:US06594175B2
公开(公告)日:2003-07-15
申请号:US09883672
申请日:2001-06-18
申请人: E. James Torok , Richard Spitzer
发明人: E. James Torok , Richard Spitzer
IPC分类号: G11C1115
CPC分类号: G11C11/16 , G11C11/5607
摘要: A multi-layered memory cell is described having a plurality of magnetic layers, each of the magnetic layers being for magnetically storing one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer. The magnetic layers, the access lines, and the at least one keeper layer form a substantially closed flux structure.
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公开(公告)号:US06538437B2
公开(公告)日:2003-03-25
申请号:US09883644
申请日:2001-06-18
申请人: Richard Spitzer , E. James Torok
发明人: Richard Spitzer , E. James Torok
IPC分类号: G01R3309
CPC分类号: B82Y25/00 , G01R33/04 , G01R33/093
摘要: A transpinnor-based magnetometer is provided having four resistive elements exhibiting GMR in a bridge configuration. A bias current is applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors. An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states. The drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two. The output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other. The frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.
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公开(公告)号:US06483740B2
公开(公告)日:2002-11-19
申请号:US09883660
申请日:2001-06-18
申请人: Richard Spitzer , E. James Torok
发明人: Richard Spitzer , E. James Torok
IPC分类号: G11C1115
CPC分类号: H01F10/324 , B82Y25/00 , G11C11/16 , G11C11/5607
摘要: A memory device is described which includes memory cells, access lines, and support electronics for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.
摘要翻译: 描述了一种存储器件,其包括存储器单元,接入线路和支持电子设备,用于便于通过接入线路访问存储在存储器单元中的信息。 存储器单元和支持电子器件都包括显示巨磁电阻的多层薄膜结构。
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公开(公告)号:US06469927B2
公开(公告)日:2002-10-22
申请号:US09883645
申请日:2001-06-18
申请人: Richard Spitzer , E. James Torok
发明人: Richard Spitzer , E. James Torok
IPC分类号: G11C1115
CPC分类号: H01C17/23 , B82Y10/00 , H01C7/13 , H01C10/00 , H01L27/222 , H01L43/08 , H01L2224/48091 , Y10T29/49032 , Y10T29/49036 , H01L2924/00014
摘要: Methods and apparatus are described relating to an electronic device which includes at least one configurable resistive element. Each such configurable resistive element includes at least one multi-layer thin film element exhibiting giant magnetoresistance. The resistance value of each configurable resistive element is configurable over a resistance value range by application of at least one magnetic field which manipulates at least one magnetization vector associated with the thin film element. One embodiment is an adjustable output gate. Another embodiment is a differential amplifier in which the gain of each channel is adjustable.
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公开(公告)号:US5929636A
公开(公告)日:1999-07-27
申请号:US846410
申请日:1997-04-30
申请人: E. James Torok , Richard Spitzer
发明人: E. James Torok , Richard Spitzer
IPC分类号: G11C11/14 , G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/00 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L29/82 , H01L43/08 , H01L43/12 , G01R33/02
CPC分类号: H01L27/226 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3268 , H01F10/3281 , H03K19/166
摘要: A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes include power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
摘要翻译: 描述了包括薄膜元件网络的固态分量。 至少一个薄膜元件表现出巨大的磁阻。 网络具有多个节点,每个节点表示两个薄膜元件之间的直接电连接。 多个节点中的第一和第二节点包括电源终端。 多个节点中的第三和第四节点包括输出。 第一导体感应耦合到至少一个薄膜元件,用于向其施加第一磁场。
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公开(公告)号:US20080285331A1
公开(公告)日:2008-11-20
申请号:US12120549
申请日:2008-05-14
CPC分类号: G11C11/1659 , Y10T29/49002
摘要: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
摘要翻译: 描述了使得具有高信息密度的非易失性存储器的各种磁阻存储器单元和架构。
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公开(公告)号:US06738284B2
公开(公告)日:2004-05-18
申请号:US10107525
申请日:2002-03-25
申请人: E. James Torok , Richard Spitzer , Shayne M. Zurn
发明人: E. James Torok , Richard Spitzer , Shayne M. Zurn
IPC分类号: G11C1100
CPC分类号: H03M7/004
摘要: A sample-and-hold circuit is described which includes a network of thin-film elements in a bridge configuration. Each of the thin-film elements exhibits giant magnetoresistance. The circuit also includes a plurality of conductors inductively coupled to each of the thin-film elements for applying magnetic fields thereto. The circuit is operable using the plurality of conductors to sample and store a value corresponding to an input signal.
摘要翻译: 描述了一种采样保持电路,其包括桥接配置中的薄膜元件网络。 每个薄膜元件都显示出巨大的磁阻。 电路还包括感应耦合到每个薄膜元件以用于向其施加磁场的多个导体。 该电路可以使用多个导体进行采样并存储对应于输入信号的值。
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公开(公告)号:US08300455B2
公开(公告)日:2012-10-30
申请号:US13028710
申请日:2011-02-16
IPC分类号: G11C11/14
CPC分类号: G11C11/1659 , Y10T29/49002
摘要: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
摘要翻译: 描述了使得具有高信息密度的非易失性存储器的各种磁阻存储器单元和架构。
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