Invention Application
US20080290410A1 Mosfet With Isolation Structure and Fabrication Method Thereof
有权
Mosfet具有隔离结构及其制作方法
- Patent Title: Mosfet With Isolation Structure and Fabrication Method Thereof
- Patent Title (中): Mosfet具有隔离结构及其制作方法
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Application No.: US11913044Application Date: 2005-10-14
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Publication No.: US20080290410A1Publication Date: 2008-11-27
- Inventor: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-Yu Lin , Ta-yung Yang
- Applicant: Chih-Feng Huang , Tuo-Hsin Chien , Jenn-Yu Lin , Ta-yung Yang
- Priority: CN200510066850.2 20050429
- International Application: PCT/CN2005/001687 WO 20051014
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A MOSFET with an isolation structure is provided. An N-type MOSFET includes a first N-type buried layer and a P-type epitaxial layer disposed in a P-type substrate. A P-type FET includes a second N-type buried layer and the P-type epitaxial layer disposed in the P-type substrate. The first, second N-type buried layers and the P-type epitaxial layer provide isolation between FETs. In addition, a plurality of separated P-type regions disposed in the P-type epitaxial layer further provides an isolation effect. A first gap exists between a first thick field oxide layer and a first P-type region, for raising a breakdown voltage of the N-type FET. A second gap exists between a second thick field oxide layer and a second N-well, for raising a breakdown voltage of the P-type FET.
Public/Granted literature
- US07923787B2 MOSFET with isolation structure and fabrication method thereof Public/Granted day:2011-04-12
Information query
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