发明申请
- 专利标题: Low noise semiconductor device
- 专利标题(中): 低噪声半导体器件
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申请号: US12068606申请日: 2008-02-08
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公开(公告)号: US20080290495A1公开(公告)日: 2008-11-27
- 发明人: Yutaka Uematsu , Tatsuya Saito , Hideki Osaka , Yoji Nishio , Shunichi Saito
- 申请人: Yutaka Uematsu , Tatsuya Saito , Hideki Osaka , Yoji Nishio , Shunichi Saito
- 专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 当前专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 优先权: JP2007-066900 20070315
- 主分类号: H01L23/528
- IPC分类号: H01L23/528
摘要:
As a power feed route in a semiconductor chip, a power feed route which reduces antiresonance impedance in the frequency range of tens of MHz is to be realized thereby to suppress power noise in a semiconductor device. By inserting structures which raise the resistance in the medium frequency band into parts where the resistance is intrinsically high, such as power wiring in a semiconductor package and capacitor interconnecting electrode parts, the antiresonance impedance in the medium frequency band can be effectively reduced while keeping the impedance low at the low frequency.
公开/授权文献
- US07986037B2 Low noise semiconductor device 公开/授权日:2011-07-26
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