发明申请
- 专利标题： ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 使用氧化物半导体的电子器件及其制造方法
-
申请号： US12123103申请日： 2008-05-19
-
公开(公告)号： US20080291350A1公开(公告)日： 2008-11-27
- 发明人: Ryo Hayashi , Masafumi Sano
- 申请人： Ryo Hayashi , Masafumi Sano
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-136697 20070523
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
公开/授权文献
信息查询
IPC分类:
