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发明申请
US20080296696A1 Semiconductor Devices Including Doped Metal Silicide Patterns and Related Methods of Forming Such Devices 审中-公开
包括掺杂金属硅化物图案的半导体器件和形成这种器件的相关方法

Semiconductor Devices Including Doped Metal Silicide Patterns and Related Methods of Forming Such Devices
摘要：
Provided are a semiconductor device and a method of forming the same. The method includes forming an interlayer dielectric on a semiconductor substrate, forming a contact hole in the interlayer dielectric to expose the semiconductor substrate, forming a metal pattern including a dopant on the exposed semiconductor substrate, and performing a heat treatment process to react the semiconductor substrate with the metal pattern to form a metal silicide pattern. The heat treatment process includes diffuses the dopant into the semiconductor substrate.
摘要（中）：

提供半导体器件及其形成方法。 该方法包括在半导体衬底上形成层间电介质，在层间电介质中形成接触孔以露出半导体衬底，在暴露的半导体衬底上形成包括掺杂剂的金属图案，并进行热处理工艺以使半导体衬底 与金属图案形成金属硅化物图案。 热处理工艺包括将掺杂剂扩散到半导体衬底中。

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