发明申请
- 专利标题: Interconnection process
- 专利标题(中): 互连过程
-
申请号: US11806541申请日: 2007-06-01
-
公开(公告)号: US20080299761A1公开(公告)日: 2008-12-04
- 发明人: Tuung Luoh , Ling-Wuu Yang , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人: Tuung Luoh , Ling-Wuu Yang , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
An interconnection process is provided. The process includes the following steps. Firstly, a semiconductor base having at least a electrical conductive region is provided. Next, a dielectric layer with a contact hole is formed to cover the semiconductor base, wherein the contact hole exposes part of the electrical conductive region. Then, a thermal process is performed on the semiconductor base covered with the dielectric layer. Lastly, a conductive layer is formed on the dielectric layer, wherein the conductive layer is electrically connected to the electrical conductive region through the contact hole.
公开/授权文献
- US07625819B2 Interconnection process 公开/授权日:2009-12-01