发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12100245申请日： 2008-04-09
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公开(公告)号： US20080303162A1公开(公告)日： 2008-12-11
- 发明人: Hidetoshi Ishida , Manabu Yanagihara , Yasuhiro Uemoto , Daisuke Ueda
- 申请人： Hidetoshi Ishida , Manabu Yanagihara , Yasuhiro Uemoto , Daisuke Ueda
- 优先权： JP2007-151245 20070607; JP2007-310292 20071130
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air.
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