Invention Application
- Patent Title: APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
- Patent Title (中): 装置和方法
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Application No.: US11760365Application Date: 2007-06-08
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Publication No.: US20080304025A1Publication Date: 2008-12-11
- Inventor: Ching-Yu Chang , Burn Jeng Lin
- Applicant: Ching-Yu Chang , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G03B27/42
- IPC: G03B27/42

Abstract:
An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer.
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