- 专利标题: CVD system and substrate cleaning method
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申请号: US12216598申请日: 2008-07-08
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公开(公告)号: US20080305275A1公开(公告)日: 2008-12-11
- 发明人: Kazuo Ichikawa , Hiroshi Tanabe , Katsuhisa Yuda
- 申请人: Kazuo Ichikawa , Hiroshi Tanabe , Katsuhisa Yuda
- 申请人地址: JP Kawasaki-shi
- 专利权人: CANON ANELVA CORPORATION
- 当前专利权人: CANON ANELVA CORPORATION
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP11-274216 19990928
- 主分类号: C23C16/453
- IPC分类号: C23C16/453
摘要:
An insulating film deposition chamber 40 has a plasma generator 14 having a plasma generation chamber 21 separated from the film deposition chamber 13 in which the substrate is arranged. A material gas is directly supplied to the film deposition chamber, and radicals are introduced into the film deposition chamber from the plasma generator, and a thin film is deposited on the substrate. Further, a cleaning gas feeder is added to the plasma generator. A cleaning gas is introduced through the cleaning gas feeder to produce plasma at the plasma generator to generate radicals, and the radicals are introduced into the film deposition chamber and irradiate the substrate to clean it.
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