公开(公告)号：US20230387216A1

公开(公告)日：2023-11-30

申请号：US18363214

申请日：2023-08-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC分类号： H01L29/16 ,  C23C16/453 ,  H01L29/20

CPC分类号： H01L29/1608 ,  H01L29/517 ,  H01L29/2003 ,  C23C16/453

摘要： A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×1021 cm−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×1018 cm−3, and a carbon concentration at the position is equal to or less than 1×1018 cm−3.

公开(公告)号：US20200270164A1

公开(公告)日：2020-08-27

申请号：US16874279

申请日：2020-05-14

申请人： FURUKAWA ELECTRIC CO. , LTD.

发明人： Tadashi Takahashi

IPC分类号： C03B37/014 ,  C23C16/40 ,  C23C16/453 ,  C03B5/235 ,  C03B9/03 ,  C03B37/027

摘要： A gas branching apparatus that branches and supplies a gas to first to N-th supply targets, includes first to N-th pipes wherein the first to N-th pipes are each branched into first to N-th branch pipes on a downstream end side, and wherein the i-th branch pipes of the respective first to N-th pipes are connected in common to the i-th supply target, and the i-th branch pipes of the respective first to N-th pipes are provided with valves, respectively, where i denotes each of integers of 1 to N.

公开(公告)号：US10655274B2

公开(公告)日：2020-05-19

申请号：US15319552

申请日：2015-05-20

申请人： COMPAGNIE GENERALE DES ETABLISSEMENTS MICHELIN ,  Michelin Recherche et Technique S.A.

发明人： Robert Nikolaus Grass ,  Wendelin Jan Stark ,  Milan Fedurco ,  Antonio Delfino ,  Jean-Paul Meraldi

IPC分类号： D07B1/06 ,  C25D3/38 ,  C25D5/50 ,  C25D7/06 ,  C23C16/453 ,  B60C1/00 ,  C01B32/184 ,  C01B32/194 ,  C01B32/186 ,  C23C16/26 ,  C25D5/34 ,  D02G3/48 ,  B60C9/00 ,  C25D5/36

摘要： A threadlike metallic or metallized reinforcer, for example a thread, film, tape or cord made of carbon steel, at the periphery of which is positioned a layer of metal referred to as “surface metal” chosen from copper, nickel and copper/nickel alloys, is characterized in that this surface metal layer is itself coated, at least in part, with at least one layer of graphene; preferably, there is grafted, to this graphene, at least one functional group which can crosslink to a polymer matrix. This reinforcer of the invention is effectively protected from corrosion by virtue of the graphene present at the surface; advantageously, it can be adhesively bonded directly, without adhesion primer or addition of metal salt, to an unsaturated rubber matrix, such as natural rubber, by virtue of the possible functionalization of this graphene.

公开(公告)号：US20200061868A1

公开(公告)日：2020-02-27

申请号：US16467299

申请日：2017-12-04

申请人： SAFRAN CERAMICS

发明人： Simon THIBAUD ,  Adrien DELCAMP ,  Sébastien BERTRAND ,  Stéphane GOUJARD

IPC分类号： B28B23/02 ,  C04B35/80 ,  C04B35/52 ,  C04B35/565 ,  C04B35/583 ,  C04B35/83 ,  C23C16/453

摘要： A shaping tooling for chemical vapor infiltration of a fiber preform includes a structural enclosure formed by supports each provided with a multiply-perforated zone. Each of the supports has in its inside face an uncased zone that includes the multiply-perforated zone. The shaping tooling further includes first and second shaping mold functional elements, each present in a respective one of the uncased zones of the support. Each shaping mold functional element has a first face of a determined shape corresponding to the shape of the part that is to be made and a second face that is held facing the inside face of a support. Each functional element has a plurality of perforations and presents a number of perforations, a size of perforations, or a shape of perforations that differs from the number, the size, or the shape of the perforations present in the facing support.

公开(公告)号：US10030307B2

公开(公告)日：2018-07-24

申请号：US14235998

申请日：2012-07-26

申请人： Christian Schmid ,  Dirk Habermann ,  Jurgen Haungs ,  Chuck Attema ,  Tom Stewart ,  Kenneth Provancha

发明人： Christian Schmid ,  Dirk Habermann ,  Jurgen Haungs ,  Chuck Attema ,  Tom Stewart ,  Kenneth Provancha

IPC分类号： C23C16/54 ,  C23C16/455 ,  C23C16/44 ,  H01L31/20 ,  C23C16/02 ,  C23C16/46 ,  C23C16/458 ,  H01L21/67 ,  H01L21/677 ,  H01L31/0224 ,  H01L31/18 ,  C23C16/453 ,  H01L31/0216 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02

CPC分类号： C23C16/54 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/402 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/4551 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45595 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/466 ,  C23C16/545 ,  H01L21/02271 ,  H01L21/67115 ,  H01L21/67706 ,  H01L21/6776 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/206 ,  Y02E10/50

摘要： In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus.

公开(公告)号：US20180138017A1

公开(公告)日：2018-05-17

申请号：US15727533

申请日：2017-10-06

申请人： Lyten, Inc.

发明人： Michael W. Stowell

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  C23C16/515 ,  C23C16/511 ,  C23C16/453 ,  C23C16/26 ,  B82Y40/00 ,  H05H1/30 ,  H01L21/3213

CPC分类号： H01J37/32192 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152 ,  C01B32/158 ,  C01B32/164 ,  C01B32/18 ,  C01B32/184 ,  C01B32/186 ,  C01B32/20 ,  C01B32/40 ,  C01B32/50 ,  C01B32/80 ,  C23C16/26 ,  C23C16/453 ,  C23C16/511 ,  C23C16/515 ,  H01J37/32266 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/32136 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4622

摘要： Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.

公开(公告)号：US09574268B1

公开(公告)日：2017-02-21

申请号：US13284738

申请日：2011-10-28

申请人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

发明人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

IPC分类号： C23C16/455 ,  C23C16/453

CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

摘要： A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

摘要翻译： 气相沉积装置包括反应器，该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体，在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道，以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道，以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置，并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道（因此，供应通道）可以与常见的反应物源连接。 还描述了相关的沉积方法。

公开(公告)号：US09567670B2

公开(公告)日：2017-02-14

申请号：US14584034

申请日：2014-12-29

申请人： Ultratech, Inc.

发明人： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/54 ,  C23C16/453 ,  C23C16/458 ,  C23C16/44

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

摘要： An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

摘要翻译： 提供了一种在基板上提供涂层表面的ALD涂覆方法。 ALD涂覆方法包括：提供包括具有第一前体喷嘴组件和第二前体喷嘴组件的单元的沉积标题; 在大气条件下沿基本上垂直于涂层表面的方向将第一前体从第一前体喷嘴组件发射到室中; 在大气条件下沿基本上垂直于涂层表面的方向将第二前体从第一前体喷嘴组件发射到室中; 去除在沉积头下方移动衬底，使得第一前体在第二前体被引导到涂层表面的第一区域之前被引导到涂层表面的第一区域上。

公开(公告)号：US09478440B2

公开(公告)日：2016-10-25

申请号：US14363719

申请日：2012-12-03

申请人： Wuxi China Resources Huajing Microelectronics Co., Ltd.

发明人： Xunhui Wang ,  Xiao Wu ,  Qijun Guo ,  Jianchao Fan

IPC分类号： C23C16/455 ,  C23C16/448 ,  C23C16/453 ,  H01L21/3215

CPC分类号： H01L21/32155 ,  C23C16/448 ,  C23C16/453 ,  C23C16/455 ,  C23C16/45502

摘要： A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof. The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part.

摘要翻译： 低压化学气相沉积（LPCVD）装置及其薄膜沉积方法。 该装置包括反应炉，其具有分别布置在炉开口部分和炉尾部分的反应气体输入管线。 在薄膜沉积期间，每个反应气体通过炉开口部分的输入管道和炉尾部分的输入管线同步引入反应炉。

公开(公告)号：US09441302B2

公开(公告)日：2016-09-13

申请号：US14368724

申请日：2012-12-27

申请人： POSCO

发明人： Dong-Yoeul Lee ,  Kyung-Hoon Nam ,  Yong-Hwa Jung ,  Seok-Jun Hong ,  Tae-Yeob Kim ,  Young-Jin Kwak ,  Mun-Jong Eom ,  Woo-Sung Jung

IPC分类号： C23C14/14 ,  C23C16/40 ,  C23C28/00 ,  C23C14/16 ,  C23C16/453 ,  C23C30/00

CPC分类号： C23C16/453 ,  B32B15/013 ,  C23C14/16 ,  C23C14/165 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5853 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/403 ,  C23C16/404 ,  C23C28/02 ,  C23C28/021 ,  C23C28/023 ,  C23C28/321 ,  C23C30/00 ,  C23C30/005 ,  Y10T428/12583 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/12792 ,  Y10T428/12799 ,  Y10T428/12972 ,  Y10T428/12979

摘要： Provided is a method for manufacturing a Zn—Mg alloy-coated steel sheet having high blackening resistance and coating adhesion. In one implementation, the method may include forming a Zn—Mg coating layer on a base steel sheet and performing a combustion chemical vapor deposition (CCVD) process to form an oxide film. The oxide film may include a metal oxide and the metal oxide may include silicon oxide (SiO2) and magnesium oxide (MgO). The base steel sheet may be maintained within a temperature range of 330° C. to 450° C. during the performing of the CCVD process.

摘要翻译： 提供一种具有高耐黑变性和涂层附着力的Zn-Mg合金涂层钢板的制造方法。 在一个实施方案中，该方法可以包括在基体钢板上形成Zn-Mg涂层并进行燃烧化学气相沉积（CCVD）工艺以形成氧​​化膜。 氧化物膜可以包括金属氧化物，并且金属氧化物可以包括氧化硅（SiO 2）和氧化镁（MgO）。 在执行CCVD工艺期间，基础钢板可以保持在330℃至450℃的温度范围内。