发明申请
- 专利标题： Gate Control and Endcap Improvement
- 专利标题（中）： 门控和端盖改进
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申请号： US12193538申请日： 2008-08-18
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公开(公告)号： US20080305599A1公开(公告)日： 2008-12-11
- 发明人: Harry Chuang , Kong-Beng Thei
- 申请人： Harry Chuang , Kong-Beng Thei
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of forming semiconductor structures comprises following steps. A gate dielectric layer is formed over a substrate in an active region. A gate electrode layer is formed over the gate dielectric layer. A first photo resist is formed over the gate electrode layer. The gate electrode layer and dielectric layer are etched thereby forming gate structures and dummy patterns, wherein at least one of the dummy patterns has at least a portion in the active region. The first photo resist is removed. A second photo resist is formed covering the gate structures. The dummy patterns unprotected by the second photo resist are removed. The second photo resist is then removed.
公开/授权文献
- US08105929B2 Gate control and endcap improvement 公开/授权日：2012-01-31
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