发明申请
- 专利标题： PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME
- 专利标题（中）： 相变存储器件及其形成方法
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申请号： US12136176申请日： 2008-06-10
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公开(公告)号： US20080308785A1公开(公告)日： 2008-12-18
- 发明人: Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
- 申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2007-0059001 20070615
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
公开/授权文献
- US07943502B2 Method of forming a phase change memory device 公开/授权日：2011-05-17
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