发明申请
US20080308847A1 METHOD OF MAKING (100) NMOS AND (110) PMOS SIDEWALL SURFACE ON THE SAME FIN ORIENTATION FOR MULTIPLE GATE MOSFET WITH DSB SUBSTRATE
有权
在具有DSB基板的多个栅极MOSFET的同一熔接方向上制造（100）NMOS和（110）PMOS面板表面的方法
- 专利标题： METHOD OF MAKING (100) NMOS AND (110) PMOS SIDEWALL SURFACE ON THE SAME FIN ORIENTATION FOR MULTIPLE GATE MOSFET WITH DSB SUBSTRATE
- 专利标题（中）： 在具有DSB基板的多个栅极MOSFET的同一熔接方向上制造（100）NMOS和（110）PMOS面板表面的方法
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申请号： US11764442申请日： 2007-06-18
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公开(公告)号： US20080308847A1公开(公告)日： 2008-12-18
- 发明人: Weize XIONG , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- 申请人： Weize XIONG , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/8244
摘要：
A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.
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