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    Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate
    7.
    发明授权
    Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate 有权
    消除在DSB衬底的固相外延期间产生的再结晶边界缺陷的方法

    公开(公告)号：US08043947B2

    公开(公告)日：2011-10-25

    申请号：US11941187

    申请日：2007-11-16

    申请人： Angelo Pinto ,  Weize Xiong ,  Manfred Ramin

    发明人： Angelo Pinto ,  Weize Xiong ,  Manfred Ramin

    IPC分类号： H01L21/425

    CPC分类号： H01L21/187 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/76224

    摘要： A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation, a second crystal orientation, and a border region disposed between the first and second crystal orientations. The border region further has a defect associated with an interface of the first crystal orientation and second the second crystal orientation, wherein the defect generally extends a distance into the semiconductor body from a surface of the body. A sacrificial portion of the semiconductor body is removed from the surface thereof, wherein removing the sacrificial portion at least partially removes the defect. The sacrificial portion can be defined by oxidizing the surface at low temperature, wherein the oxidation at least partially consumes the defect. The sacrificial portion can also be removed by CMP. An STI feature may be further formed over the defect after removal of the sacrificial portion, therein consuming any remaining defect.

    摘要翻译： 一种用于半导体处理的方法提供了具有第一晶体取向，第二晶体取向和设置在第一和第二晶体取向之间的边界区域的DSB半导体本体。 边界区域还具有与第一晶体取向和第二晶体取向的界面相关联的缺陷，其中缺陷通常从身体的表面延伸到半导体本体中的距离。 从其表面去除半导体本体的牺牲部分，其中去除牺牲部分至少部分地去除缺陷。 牺牲部分可以通过在低温下氧化表面来限定，其中氧化至少部分地消耗缺陷。 牺牲部分也可以通过CMP去除。 在去除牺牲部分之后，可以在缺陷上进一步形成STI特征，其中消耗任何剩余的缺陷。

    REDUCTION OF STI CORNER DEFECTS DURING SPE IN SEMICONDCUTOR DEVICE FABRICATION USING DSB SUBSTRATE AND HOT TECHNOLOGY
    8.
    发明申请
    REDUCTION OF STI CORNER DEFECTS DURING SPE IN SEMICONDCUTOR DEVICE FABRICATION USING DSB SUBSTRATE AND HOT TECHNOLOGY 审中-公开
    使用DSB基板和热技术在半导体器件制造中的SPE期间减少STI拐角缺陷

    公开(公告)号：US20100304547A1

    公开(公告)日：2010-12-02

    申请号：US12637279

    申请日：2009-12-14

    申请人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    发明人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76275 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045

    摘要： A device and method of reducing residual STI corner defects in a hybrid orientation transistor comprising, forming a direct silicon bonded substrate wherein a second silicon layer with a second crystal orientation is bonded to a handle substrate with a first crystal orientation, forming a pad oxide layer on the second silicon layer, forming a nitride layer on the pad oxide layer, forming an isolation trench within the direct silicon bonded substrate through the second silicon layer and into the handle substrate, patterning a PMOS region of the direct silicon bonded substrate utilizing photoresist including a portion of the isolation trench, implanting and amorphizing an NMOS region of the direct silicon bonded substrate, removing the photoresist, performing solid phase epitaxy, performing a recrystallization anneal, forming an STI liner, completing front end processing, and performing back end processing.

    摘要翻译： 一种降低混合取向晶体管中的残留STI拐角缺陷的装置和方法，包括：形成直接硅键合衬底，其中具有第二晶体取向的第二硅层以第一晶体取向结合到手柄衬底上，形成衬垫氧化物层 在所述第二硅层上，在所述焊盘氧化物层上形成氮化物层，通过所述第二硅层在所述直接硅键合衬底内形成隔离沟槽并进入所述处理衬底，使用光致抗蚀剂构图所述直接硅键合衬底的PMOS区域 隔离沟槽的一部分，将直接硅键合衬底的NMOS区域注入和非晶化，去除光致抗蚀剂，进行固相外延，进行再结晶退火，形成STI衬垫，完成前端处理和执行后端处理。

    METHOD TO REDUCE RESIDUAL STI CORNER DEFECTS GENERATED DURING SPE IN THE FABRICATION OF NANO-SCALE CMOS TRANSISTORS USING DSB SUBSTRATE AND HOT TECHNOLOGY
    9.
    发明申请
    METHOD TO REDUCE RESIDUAL STI CORNER DEFECTS GENERATED DURING SPE IN THE FABRICATION OF NANO-SCALE CMOS TRANSISTORS USING DSB SUBSTRATE AND HOT TECHNOLOGY 审中-公开
    使用DSB基板和热技术在纳米尺寸CMOS晶体管制造中降低SPE期间产生的残留STI角度缺陷的方法

    公开(公告)号：US20090057816A1

    公开(公告)日：2009-03-05

    申请号：US11847053

    申请日：2007-08-29

    申请人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    发明人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    IPC分类号： H01L21/76 ,  H01L29/00

    CPC分类号： H01L21/76275 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045

    摘要： A device and method of reducing residual STI corner defects in a hybrid orientation transistor comprising, forming a direct silicon bonded substrate wherein a second silicon layer with a second crystal orientation is bonded to a handle substrate with a first crystal orientation, forming a pad oxide layer on the second silicon layer, forming a nitride layer on the pad oxide layer, forming an isolation trench within the direct silicon bonded substrate through the second silicon layer and into the handle substrate, patterning a PMOS region of the direct silicon bonded substrate utilizing photoresist including a portion of the isolation trench, implanting and amorphizing an NMOS region of the direct silicon bonded substrate, removing the photoresist, performing solid phase epitaxy, performing a recrystallization anneal, forming an STI liner, completing front end processing, and performing back end processing.

    摘要翻译： 一种降低混合取向晶体管中的残留STI拐角缺陷的装置和方法，包括：形成直接硅键合衬底，其中具有第二晶体取向的第二硅层以第一晶体取向结合到手柄衬底上，形成衬垫氧化物层 在所述第二硅层上，在所述焊盘氧化物层上形成氮化物层，通过所述第二硅层在所述直接硅键合衬底内形成隔离沟槽并进入所述处理衬底，使用光致抗蚀剂构图所述直接硅键合衬底的PMOS区域 隔离沟槽的一部分，将直接硅键合衬底的NMOS区域注入和非晶化，去除光致抗蚀剂，进行固相外延，进行再结晶退火，形成STI衬垫，完成前端处理和执行后端处理。

    Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology
    10.
    发明授权
    Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology 有权
    使用DSB基板和热技术在半导体器件制造过程中减少SPE中的角部缺陷

    公开(公告)号：US08846487B2

    公开(公告)日：2014-09-30

    申请号：US13544519

    申请日：2012-07-09

    申请人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    发明人： Angelo Pinto ,  Periannan R. Chidambaram ,  Rick L. Wise

    IPC分类号： H01L21/76 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/762 ,  H01L29/04

    CPC分类号： H01L21/76275 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045

    摘要： A device and method of reducing residual STI corner defects in a hybrid orientation transistor comprising, forming a direct silicon bonded substrate wherein a second silicon layer with a second crystal orientation is bonded to a handle substrate with a first crystal orientation, forming a pad oxide layer on the second silicon layer, forming a nitride layer on the pad oxide layer, forming an isolation trench within the direct silicon bonded substrate through the second silicon layer and into the handle substrate, patterning a PMOS region of the direct silicon bonded substrate utilizing photoresist including a portion of the isolation trench, implanting and amorphizing an NMOS region of the direct silicon bonded substrate, removing the photoresist, performing solid phase epitaxy, performing a recrystallization anneal, forming an STI liner, completing front end processing, and performing back end processing.

    摘要翻译： 一种降低混合取向晶体管中的残留STI拐角缺陷的装置和方法，包括：形成直接硅键合衬底，其中具有第二晶体取向的第二硅层以第一晶体取向结合到手柄衬底上，形成衬垫氧化物层 在所述第二硅层上，在所述焊盘氧化物层上形成氮化物层，通过所述第二硅层在所述直接硅键合衬底内形成隔离沟槽并进入所述处理衬底，使用光致抗蚀剂构图所述直接硅键合衬底的PMOS区域 隔离沟槽的一部分，将直接硅键合衬底的NMOS区域注入和非晶化，去除光致抗蚀剂，进行固相外延，进行再结晶退火，形成STI衬垫，完成前端处理和执行后端处理。