发明申请
US20080308907A1 PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
有权
平面非阳极m-PLANE III组氮化物膜在杂质基底上
- 专利标题： PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- 专利标题（中）： 平面非阳极m-PLANE III组氮化物膜在杂质基底上
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申请号： US12140096申请日： 2008-06-16
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公开(公告)号： US20080308907A1公开(公告)日： 2008-12-18
- 发明人: Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. DenBaars , Shuji Nakamura , James S. Speck
- 申请人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. DenBaars , Shuji Nakamura , James S. Speck
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/205
摘要：
A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.