发明申请
US20080308940A1 LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DEVICES
审中-公开
在半导体器件中的横向电流承载能力改进
- 专利标题: LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DEVICES
- 专利标题(中): 在半导体器件中的横向电流承载能力改进
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申请号: US12198196申请日: 2008-08-26
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公开(公告)号: US20080308940A1公开(公告)日: 2008-12-18
- 发明人: Natalie Barbara Feilchenfeld , Zhong-Xiang He , Qizhi Liu , BethAnn Rainey , Ping-Chuan Wang , Kimball M. Watson
- 申请人: Natalie Barbara Feilchenfeld , Zhong-Xiang He , Qizhi Liu , BethAnn Rainey , Ping-Chuan Wang , Kimball M. Watson
- 主分类号: H01L23/522
- IPC分类号: H01L23/522
摘要:
A semiconductor structure. The semiconductor structure includes (a) a substrate; (b) a first semiconductor device on the substrate; (c) N ILD (Inter-Level Dielectric) layers on the first semiconductor device, wherein N is an integer greater than one; and (d) an electrically conductive line electrically coupled to the first semiconductor device. The electrically conductive line is adapted to carry a lateral electric current in a lateral direction parallel to an interfacing surface between two consecutive ILD layers of the N ILD layers. The electrically conductive line is present in at least two ILD layers of the N ILD layers. The electrically conductive line does not comprise an electrically conductive via that is adapted to carry a vertical electric current in a vertical direction perpendicular to the interfacing surface.
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