发明申请
- 专利标题: Magnetic multilayered film current element
- 专利标题(中): 磁性多层薄膜电流元件
-
申请号: US12155924申请日: 2008-06-11
-
公开(公告)号: US20080311431A1公开(公告)日: 2008-12-18
- 发明人: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-156848 20070613
- 主分类号: G11B5/65
- IPC分类号: G11B5/65
摘要:
A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.
公开/授权文献
- US08111488B2 Magnetic multilayered film current element 公开/授权日:2012-02-07
信息查询
IPC分类: