发明申请
- 专利标题： Semiconductor device surface roughness reduction
- 专利标题（中）： 半导体器件表面粗糙度降低
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申请号： US11820088申请日： 2007-06-18
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公开(公告)号： US20080311762A1公开(公告)日： 2008-12-18
- 发明人: Mark Doczy
- 申请人： Mark Doczy
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G21K5/00
摘要：
Methods and apparatus relating to surface roughness reduction are described. In one embodiment, a particle beam may be directed onto the surface roughness of a semiconductor device to reduce the roughness. Other embodiments are also disclosed.
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