发明申请
US20080315209A1 Group III Nitride Semiconductor Device and Epitaxial Substrate
有权
第III族氮化物半导体器件和外延衬底
- 专利标题： Group III Nitride Semiconductor Device and Epitaxial Substrate
- 专利标题（中）： 第III族氮化物半导体器件和外延衬底
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申请号： US11571990申请日： 2006-01-20
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公开(公告)号： US20080315209A1公开(公告)日： 2008-12-25
- 发明人: Kouhei Miura , Makoto Kiyama , Takashi Sakurada
- 申请人： Kouhei Miura , Makoto Kiyama , Takashi Sakurada
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2005-128470 20050426
- 国际申请： PCT/JP2006/300822 WO 20060120
- 主分类号： H01L29/20
- IPC分类号： H01L29/20
摘要：
Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (10 12)-plane XRD full-width-at-half-maximum of 100 sec or less.
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