发明申请
- 专利标题: Method of Forming Nanotube Vertical Field Effect Transistor
- 专利标题(中): 形成纳米管垂直场效应晶体管的方法
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申请号: US11765788申请日: 2007-06-20
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公开(公告)号: US20080315302A1公开(公告)日: 2008-12-25
- 发明人: Reginald Conway Farrow , Amit Goyal
- 申请人: Reginald Conway Farrow , Amit Goyal
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture.
公开/授权文献
- US07736979B2 Method of forming nanotube vertical field effect transistor 公开/授权日:2010-06-15