发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12141386申请日： 2008-06-18
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公开(公告)号： US20080315305A1公开(公告)日： 2008-12-25
- 发明人: Tomoko Matsudai , Norio Yasuhara , Manji Obatake
- 申请人： Tomoko Matsudai , Norio Yasuhara , Manji Obatake
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-162642 20070620
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A resurf layer of the second conduction type is formed in the surface of the semiconductor layer at a position sandwiching the gate electrode with the LDD layer. A drain layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the resurf layer. The resurf layer is formed in depth to have peaks of a first and a second impurity concentration in turn from the surface of the semiconductor layer. The peak of the first impurity concentration is smaller than the peak of the second impurity concentration.
公开/授权文献
- US08159036B2 Semiconductor device and method of manufacturing the same 公开/授权日：2012-04-17
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