发明申请
US20080318373A1 Method of fabricating self-aligned bipolar transistor having tapered collector
有权
制造具有锥形集电极的自对准双极晶体管的方法
- 专利标题: Method of fabricating self-aligned bipolar transistor having tapered collector
- 专利标题(中): 制造具有锥形集电极的自对准双极晶体管的方法
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申请号: US12220521申请日: 2008-07-25
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公开(公告)号: US20080318373A1公开(公告)日: 2008-12-25
- 发明人: Hiroyuki Akatsu , Rama Divakaruni , Gregory G. Freeman , David R. Greenberg , Marwan H. Khater , William R. Tonti
- 申请人: Hiroyuki Akatsu , Rama Divakaruni , Gregory G. Freeman , David R. Greenberg , Marwan H. Khater , William R. Tonti
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method is provided for making a bipolar transistor which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface having substantially less area than the lower surface. The collector pedestal can be formed on a surface of a collector active region exposed within an opening extending through first and second overlying dielectric regions, where the opening defines vertically aligned edges of the first and second dielectric regions.