发明申请
US20080320209A1 High Performance and Endurance Non-volatile Memory Based Storage Systems
审中-公开
高性能和耐久性非易失性存储器存储系统
- 专利标题: High Performance and Endurance Non-volatile Memory Based Storage Systems
- 专利标题(中): 高性能和耐久性非易失性存储器存储系统
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申请号: US12141879申请日: 2008-06-18
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公开(公告)号: US20080320209A1公开(公告)日: 2008-12-25
- 发明人: Charles C. Lee , I-Kang Yu , Abraham Chih-Kang Ma , David Q. Chow , Ming-Shiang Shen
- 申请人: Charles C. Lee , I-Kang Yu , Abraham Chih-Kang Ma , David Q. Chow , Ming-Shiang Shen
- 申请人地址: US CA San Jose
- 专利权人: Super Talent Electronics, Inc.
- 当前专利权人: Super Talent Electronics, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/00
摘要:
High performance and endurance non-volatile memory (NVM) based storage systems are disclosed. According to one aspect of the present invention, a NVM based storage system comprises at least one intelligent NVM device. Each intelligent NVM device includes a control interface logic and NVM. Logical-to-physical address conversion is performed within the control interface logic, thereby eliminating the need of address conversion in a storage system level controller. In another aspect, a volatile memory buffer together with corresponding volatile memory controller and phase-locked loop circuit is included in a NVM based storage system. The volatile memory buffer is partitioned to two parts: a command queue; and one or more page buffers. The command queue is configured to hold received data transfer commands by the storage protocol interface bridge, while the page buffers are configured to hold data to be transmitted between the host computer and the at least one NVM device.