发明申请
US20090001470A1 METHOD FOR FORMING ACUTE-ANGLE SPACER FOR NON-ORTHOGONAL FINFET AND THE RESULTING STRUCTURE
审中-公开
形成用于非正交FINFET和结构结构的急性角度间隔的方法
- 专利标题： METHOD FOR FORMING ACUTE-ANGLE SPACER FOR NON-ORTHOGONAL FINFET AND THE RESULTING STRUCTURE
- 专利标题（中）： 形成用于非正交FINFET和结构结构的急性角度间隔的方法
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申请号： US11768257申请日： 2007-06-26
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公开(公告)号： US20090001470A1公开(公告)日： 2009-01-01
- 发明人: Brent A. Anderson , Edward J. Nowak , Kathryn T. Schonenberg
- 申请人： Brent A. Anderson , Edward J. Nowak , Kathryn T. Schonenberg
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
In a method of fabricating a semiconductor finFET transistor for an integrated circuit chip comprising 1) the formation of at least one fin body on the surface of a substrate and 2) the formation of a gate on said fin body in a non-orthogonal orientation relative to the body thereby creating acute angle regions at the crossover of the gate on the body, and 3) the formation of a protective material in the acute angle regions so as to prevent damage to the gate during subsequent fabrication steps. The structure of the finFET transistor comprises such a transistor with protective material in the acute angle regions at the crossover of the gate on the body.
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