发明申请
- 专利标题： SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- 专利标题（中）： 半导体集成电路设备
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申请号： US12164507申请日： 2008-06-30
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公开(公告)号： US20090001497A1公开(公告)日： 2009-01-01
- 发明人: Hitoshi MITANI
- 申请人： Hitoshi MITANI
- 申请人地址： JP KANAGAWA
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KANAGAWA
- 优先权： JP2007-170442 20070628
- 主分类号： H01L31/0216
- IPC分类号： H01L31/0216 ; H01L23/02
摘要：
A semiconductor integrated circuit device includes a substrate having a PROM formed thereon in which the data memory state of the PROM is changed by the irradiation of light, and a multilayer wiring structure formed on the same side of the substrate as the PROM is formed. The multilayer wiring structure includes a transparent area, a shield area, and a PAD portion. The transparent area is formed from transparent material at a position opposite to the PROM area where the PROM is formed, and used as a light guiding path from the outside of the multilayer wiring structure to the PROM. The shield area is formed continuously from shielding materials arranged in several layers in the periphery of the transparent area. The PAD portion is formed on the outside of the shield area in regard to the transparent area, and controls the memory state of the PROM.
公开/授权文献
- US07745936B2 Semiconductor integrated circuit device 公开/授权日：2010-06-29
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