发明申请
- 专利标题： MEMORY ARRAY ON MORE THAN ONE DIE
- 专利标题（中）： 内存阵列超过一颗
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申请号： US11771054申请日： 2007-06-29
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公开(公告)号： US20090001601A1公开(公告)日： 2009-01-01
- 发明人: Mohammed H. Taufique , Derwin Jallice , Donald W. McCauley , John P. DeVale , Jeffrey P. Rupley, II , Edward A. Brekelbaum , Gabriel H. Loh , Bryan Black
- 申请人： Mohammed H. Taufique , Derwin Jallice , Donald W. McCauley , John P. DeVale , Jeffrey P. Rupley, II , Edward A. Brekelbaum , Gabriel H. Loh , Bryan Black
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
For one disclosed embodiment, an apparatus may comprise a first die including a first plurality of memory cells for a memory array and a second die including a second plurality of memory cells for the memory array. The second die may include a shared line for the memory array to conduct digital signals for memory cells of both the first and second plurality of memory cells. Other embodiments are also disclosed.
公开/授权文献
- US07692946B2 Memory array on more than one die 公开/授权日：2010-04-06