发明申请
- 专利标题: LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE
- 专利标题(中): 使用晶体管结构的发光器件和光接收器件
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申请号: US12031287申请日: 2008-02-14
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公开(公告)号: US20090008628A1公开(公告)日: 2009-01-08
- 发明人: Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
- 申请人: Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-0067032 20070704
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L29/08 ; H01L29/06
摘要:
Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.