A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device which is convertible among a high current state, an intermediate current state, and a low current state, said device includes upper and lower conductive layers; a conductive organic layer comprising a conductive organic polymer and which is formed between the upper and lower conductive layers and has a bistable conduction property; and nanocrystals are formed in the conductive organic layer. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS). The method is characterized in that a conductive organic layer is formed by applying a conductive organic material such as PVK or PS using spin coating. Therefore, it is possible to provide a highly-integrated memory device that consumes less power and provides high operating speed. In addition, it is possible to provide the thermal stability of a memory device by using a conductive organic polymer. Moreover, it is possible to reduce the time required to deposit a conductive organic layer by forming a conductive layer using spin coating. Furthermore, it is possible to form a conductive organic layer in various shapes by using mask patterns that can be formed on a substrate in various shapes.