摘要:
Disclosed is a double-sided light-collecting organic solar cell. The double-sided light-collecting organic solar cell comprises: a first light-transmitting electrode; a first photoactive layer disposed on the first light-transmitting electrode; a reflective electrode disposed on the first photoactive layer; a second photoactive layer disposed on the reflective electrode; and a second light-transmitting electrode disposed on the second photoactive layer. According to the present invention, photoactive layers are formed on both sides of a reflective electrode in the middle, and light-transmitting electrodes are formed to enable light to be absorbed at both sides of a cell, to increase the light absorption of the cell and enable the production of a highly efficient organic solar cell.
摘要:
Disclosed is a slurry for polishing a phase change material. The slurry includes an abrasive, an alkaline polishing promoter and deionized water. Due to the use of the abrasive and the alkaline polishing promoter, the pH of the slurry is adjusted, the polishing rate of the phase change material is improved, and the polishing selectivity of the phase change material to an underlying insulating layer is increased. Further disclosed is a method for patterning a phase change material using the slurry.
摘要:
A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere containing nitrogen (N2) and argon (Ar) or N2 and hydrogen (H2), in a donor killing step during a wafering process.
摘要:
A wafer packaging method in which a wafer is placed into a packaging bag that is sealed before the concentration of sulphuric oxide on the surface of the wafer reaches 3×1012 atoms/cm2. The placing of the wafer in the wafer packaging bag is carried out in a substantially clean environment
摘要翻译:一种晶片封装方法,其中将晶片放置在在晶片表面上的硫酸氧化物的浓度达到3×10 12原子/ cm 2之前密封的包装袋中。 在晶片包装袋中放置晶片在基本上清洁的环境中进行
摘要:
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要:
The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.
摘要:
Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要:
The present invention provides a solar cell and manufacturing method thereof. The solar cell according to the present invention comprises: first and second electrodes, at least one of which has light transmitting properties; two or more photoelectric conversion layers positioned between the first and second electrodes; and a transflective conductive layer positioned between the photoelectric conversion layers. Further, tunneling layers are also provided between the photoelectric conversion layers and the transflective conductive layer. The efficiency of the solar cell can be improved, as compared with the prior art, by providing tunneling layers and a transflective conductive layer in this way.
摘要:
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
摘要:
Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.