发明申请
US20090008712A1 CARBON NANO-TUBE (CNT) THIN FILM COMPRISING METALLIC NANO-PARTICLES, AND A MANUFACTURING METHOD THEREOF 审中-公开
碳纳米管(CNT)薄膜包含金属纳米颗粒及其制造方法

CARBON NANO-TUBE (CNT) THIN FILM COMPRISING METALLIC NANO-PARTICLES, AND A MANUFACTURING METHOD THEREOF
摘要:
Disclosed is a carbon nanotube (CNT) thin film having metallic nanoparticles. The CNT thin film includes a plastic transparent substrate and a CNT composition coated on the substrate. The CNT composition includes a CNT and metallic nanoparticles distributed on the CNT surface. The plastic transparent substrate is flexible. The metallic nanoparticles are formed by heating a metallic precursor adsorbed in the CNT surface. A method of manufacturing the CNT thin film having metallic nanoparticles is also disclosed. A CNT-dispersed solution is prepared by mixing a CNT with a dispersant or a dispersion solvent. The CNT-dispersed solution is used to form a CNT thin film. Metallic precursors are implanted in the CNT thin film. Then, a heat-treatment is applied to transform the metallic precursors into metallic particles including metallic nanoparticles.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
0/0