发明申请
US20090009738A1 SURFACE LEVEL DETECTION METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD 失效
表面水平检测方法,曝光装置和装置制造方法

  • 专利标题: SURFACE LEVEL DETECTION METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
  • 专利标题(中): 表面水平检测方法,曝光装置和装置制造方法
  • 申请号: US11846996
    申请日: 2007-08-29
  • 公开(公告)号: US20090009738A1
    公开(公告)日: 2009-01-08
  • 发明人: Ryo Sasaki
  • 申请人: Ryo Sasaki
  • 申请人地址: JP Tokyo
  • 专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2006-247353 20060912
  • 主分类号: G03B27/42
  • IPC分类号: G03B27/42 G01B11/26
SURFACE LEVEL DETECTION METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
摘要:
This invention discloses a wafer surface level detection method. The wafer surface level detection method includes a first level measurement step of measuring a level of a surface of a substrate having a plurality of shot regions; a position measurement step of measuring a position along the surface of the substrate; a first movement step of moving the substrate in at least a vertical direction on the basis of the measurement result obtained in the first level measurement step and the measurement result obtained in the position measurement step; and a second level measurement step of measuring the level of the surface of the substrate after the first movement step, wherein each of the plurality of shot regions has a measurement region, wherein in the first movement step, the substrate is moved such that a relative position of the measurement region of each of the plurality of shot regions and each of the plurality of shot regions along the surface is constant, and wherein in the second level measurement step, the measurement region of each of the plurality of shot regions is measured.
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