A method for increasing an electrical resistance of a resistor. A semiconductor structure that includes the resistor is placed in a chamber that includes a gas including nitrogen-containing molecules at an nitrogen concentration. A fraction F of an exterior surface of a surface layer of the resistor is exposed to the nitrogen-comprising molecules. A portion of the surface layer is heated at a heating temperature. A combination of the nitrogen concentration and the heating temperature is sufficient to nitridize the portion of the surface layer by reacting the portion with the nitrogen-containing molecules. Heating the portion of the surface layer includes directing a beam of radiation or particles into the portion of the surface layer heat the portion of the surface layer. The portion of the surface layer is nitridized by being reacted with the nitrogen-containing molecules such that an electrical resistance of the resistor is increased.