发明申请
US20090011536A1 OPTICAL DEVICE WITH IROX NANOSTRUTURE ELECTRODE NEURAL INTERFACE
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光学器件与IROX纳米电极神经接口
- 专利标题: OPTICAL DEVICE WITH IROX NANOSTRUTURE ELECTRODE NEURAL INTERFACE
- 专利标题(中): 光学器件与IROX纳米电极神经接口
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申请号: US11496157申请日: 2006-07-31
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公开(公告)号: US20090011536A1公开(公告)日: 2009-01-08
- 发明人: Fengyan Zhang , Sheng Teng Hsu
- 申请人: Fengyan Zhang , Sheng Teng Hsu
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO2, SiN, TiO2, or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.
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