Invention Application
US20090011609A1 RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE
有权
用于制造非易失性电荷捕获存储器件的放射性氧化方法
- Patent Title: RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE
- Patent Title (中): 用于制造非易失性电荷捕获存储器件的放射性氧化方法
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Application No.: US12197466Application Date: 2008-08-25
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Publication No.: US20090011609A1Publication Date: 2009-01-08
- Inventor: Krishnaswamy Ramkumar , Sagy Levy , Jeong Byun
- Applicant: Krishnaswamy Ramkumar , Sagy Levy , Jeong Byun
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.
Public/Granted literature
- US08318608B2 Method of fabricating a nonvolatile charge trap memory device Public/Granted day:2012-11-27
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