发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题(中): 半导体发光器件
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申请号: US12171638申请日: 2008-07-11
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公开(公告)号: US20090014734A1公开(公告)日: 2009-01-15
- 发明人: Yukie Nishikawa , Shinji Nunotani
- 申请人: Yukie Nishikawa , Shinji Nunotani
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-183217 20070712
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.
公开/授权文献
- US08519411B2 Semiconductor light emitting device 公开/授权日:2013-08-27