Invention Application
- Patent Title: TWO BIT MEMORY STRUCTURE AND METHOD OF MAKING THE SAME
- Patent Title (中): 两位存储器结构及其制造方法
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Application No.: US11946868Application Date: 2007-11-29
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Publication No.: US20090014773A1Publication Date: 2009-01-15
- Inventor: Ching-Nan Hsiao , Ying-Cheng Chuang , Chung-Lin Huang , Shih-Yang Chiu
- Applicant: Ching-Nan Hsiao , Ying-Cheng Chuang , Chung-Lin Huang , Shih-Yang Chiu
- Priority: TW096125082 20070710
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/76
Abstract:
A method for fabricating the memory structure includes: providing a substrate having a pad, forming an opening in the pad, forming a first spacer on a sidewall of the opening, filling the opening with a sacrificial layer, removing the first spacer and exposing a portion of the substrate, removing the exposed substrate to define a first trench and a second trench, removing the sacrificial layer to expose a surface of the substrate to function as a channel region, forming a first dielectric layer on a surface of the first trench, a surface of the second trench and a surface of the channel region, filling the first trench and the second trench with a first conductive layer, forming a second dielectric layer on a surface of the first conductive layer and the surface of the channel region, filling the opening with a second conductive layer, and removing the pad.
Public/Granted literature
- US07700991B2 Two bit memory structure and method of making the same Public/Granted day:2010-04-20
Information query
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