Invention Application
US20090014795A1 Substrate for field effect transistor, field effect transistor and method for production thereof
审中-公开
场效应晶体管用基板，场效应晶体管及其制造方法
- Patent Title: Substrate for field effect transistor, field effect transistor and method for production thereof
- Patent Title (中): 场效应晶体管用基板，场效应晶体管及其制造方法
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Application No.: US11658564Application Date: 2005-07-14
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Publication No.: US20090014795A1Publication Date: 2009-01-15
- Inventor: Risho Koh , Katsuhiko Tanaka , Shigeharu Yamagami , Koichi Terashima , Hitoshi Wakabayashi , Kiyoshi Takeuchi , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda
- Applicant: Risho Koh , Katsuhiko Tanaka , Shigeharu Yamagami , Koichi Terashima , Hitoshi Wakabayashi , Kiyoshi Takeuchi , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda
- Priority: JP2004-221858 20040729
- International Application: PCT/JP2005/013021 WO 20050714
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/336
Abstract:
A π gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition.
Information query
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