发明申请
- 专利标题： Semiconductor Device and Method for Manufacturing the Same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11775504申请日： 2007-07-10
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公开(公告)号： US20090014806A1公开(公告)日： 2009-01-15
- 发明人: Martin Ostermayr , Winfried Kamp , Anton Huber
- 申请人： Martin Ostermayr , Winfried Kamp , Anton Huber
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8238
摘要：
A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.
公开/授权文献
- US07816198B2 Semiconductor device and method for manufacturing the same 公开/授权日：2010-10-19
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