- 专利标题: Structure of high power edge emission laser diode
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申请号: US11987431申请日: 2007-11-30
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公开(公告)号: US20090016396A1公开(公告)日: 2009-01-15
- 发明人: Tien-Chang Lu , Chyong-Hua Chen
- 申请人: Tien-Chang Lu , Chyong-Hua Chen
- 优先权: TW96133414 20070709
- 主分类号: H01S5/34
- IPC分类号: H01S5/34 ; H01S5/343
摘要:
A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.
公开/授权文献
- US07577175B2 Structure of high power edge emission laser diode 公开/授权日:2009-08-18
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