Structure of high power edge emission laser diode
    2.
    发明授权
    Structure of high power edge emission laser diode 有权
    高功率边缘发射激光二极管的结构

    公开(公告)号:US07577175B2

    公开(公告)日:2009-08-18

    申请号:US11987431

    申请日:2007-11-30

    IPC分类号: H01S5/00

    摘要: A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.

    摘要翻译: 提供了具有啁啾周期性分布的多模延伸子层的高功率边缘发射激光二极管的结构。 近场图案(NFP)是L形,高强度部分与多量子阱很好地重叠。 此外,低强度部分将尽可能地延伸到n型包层。 因此,高功率边缘发射激光二极管的镜面上的光功率密度较低,垂直发散角减小,从而延长其寿命。

    Holographically defined surface mask etching method and etched optical structures
    3.
    发明授权
    Holographically defined surface mask etching method and etched optical structures 有权
    全息定义的表面掩模蚀刻方法和蚀刻光学结构

    公开(公告)号:US07421158B2

    公开(公告)日:2008-09-02

    申请号:US10521425

    申请日:2003-07-18

    IPC分类号: G02B6/26 G02B6/255 G02F1/295

    摘要: The invention is directed to a method for etching a solid state material to create a surface relief pattern. A resist layer is formed on the surface of the solid state material. The photoresist layer is holographically patterned to form a patterned mask. The pattern is then transferred into the solid state material by a dry etching process. The invention is especially useful for forming optical nanostructures. In preferred embodiments, a direct write process, such as ebeam lithography, is used to define defects and functional elements, such as waveguides and cavities.

    摘要翻译: 本发明涉及一种用于蚀刻固态材料以产生表面浮雕图案的方法。 在固态材料的表面上形成抗蚀剂层。 光致抗蚀剂层被全息地图案化以形成图案化掩模。 然后通过干蚀刻工艺将图案转移到固态材料中。 本发明特别适用于形成光学纳米结构。 在优选实施例中,直接写入过程(例如光束光刻)用于限定缺陷和功能元件,例如波导和空腔。