发明申请
- 专利标题: Method for manufacturing solar cell and solar cell
- 专利标题(中): 制造太阳能电池和太阳能电池的方法
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申请号: US11918899申请日: 2006-04-07
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公开(公告)号: US20090020156A1公开(公告)日: 2009-01-22
- 发明人: Hiroyuki Ohtsuka , Naoki Ishikawa , Masatoshi Takahashi
- 申请人: Hiroyuki Ohtsuka , Naoki Ishikawa , Masatoshi Takahashi
- 申请人地址: JP TOKYO JP TOKYO
- 专利权人: SHIN-ETSU HANDOTAI CO., LTD.,SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU HANDOTAI CO., LTD.,SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP TOKYO JP TOKYO
- 优先权: JP2005-127898 20050426
- 国际申请: PCT/JP2006/307429 WO 20060407
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L31/18 ; H01L21/20 ; H01L21/22
摘要:
The present invention is a method for manufacturing a solar cell by forming a pn junction in a semiconductor substrate having a first conductivity type to manufacture a solar cell, including at least: applying a first coating material containing a dopant onto the semiconductor substrate having the first conductivity type; and performing vapor-phase diffusion heat treatment to form a first diffusion layer in a region applied with the first coating material and a second diffusion layer, which is formed next to the first diffusion layer through vapor-phase diffusion, with a conductivity lower than a conductivity of the first diffusion layer at the same time, and provides a solar cell. Hence, it is possible to provide a method for manufacturing a solar cell, which can manufacture a solar cell at a low cost in a simple and easy way while suppressing surface recombination in a light-receiving surface other than an electrode region and recombination in an emitter to increase photoelectric conversion efficiency of the solar cell, and a solar cell.
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