公开(公告)号：US20090020158A1

公开(公告)日：2009-01-22

申请号：US11918719

申请日：2006-04-11

申请人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

发明人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

IPC分类号： H01L31/00 ,  H01L21/22 ,  B32B9/00

CPC分类号： H01L21/2254 ,  H01L31/022425 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

摘要翻译： 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，其中至少包括：含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂，以及 包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上，使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层，具有导电性的第二扩散层比第一扩散层的第二扩散层低，通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。 因此，可以提供制造太阳能电池的方法，该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池，并且通过简单且容易的方法，通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合，同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。

公开(公告)号：US20090020156A1

公开(公告)日：2009-01-22

申请号：US11918899

申请日：2006-04-07

申请人： Hiroyuki Ohtsuka ,  Naoki Ishikawa ,  Masatoshi Takahashi

发明人： Hiroyuki Ohtsuka ,  Naoki Ishikawa ,  Masatoshi Takahashi

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L21/20 ,  H01L21/22

CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention is a method for manufacturing a solar cell by forming a pn junction in a semiconductor substrate having a first conductivity type to manufacture a solar cell, including at least: applying a first coating material containing a dopant onto the semiconductor substrate having the first conductivity type; and performing vapor-phase diffusion heat treatment to form a first diffusion layer in a region applied with the first coating material and a second diffusion layer, which is formed next to the first diffusion layer through vapor-phase diffusion, with a conductivity lower than a conductivity of the first diffusion layer at the same time, and provides a solar cell. Hence, it is possible to provide a method for manufacturing a solar cell, which can manufacture a solar cell at a low cost in a simple and easy way while suppressing surface recombination in a light-receiving surface other than an electrode region and recombination in an emitter to increase photoelectric conversion efficiency of the solar cell, and a solar cell.

摘要翻译： 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，以制造太阳能电池，其至少包括：将包含掺杂剂的第一涂层材料施加到具有第一导电类型的半导体衬底上 导电型; 并且进行气相扩散热处理以在施加有第一涂层材料的区域中形成第一扩散层，以及第二扩散层，其通过气相扩散形成在第一扩散层旁边，导电率低于 同时提供第一扩散层的电导率，并提供太阳能电池。 因此，可以提供一种制造太阳能电池的方法，该太阳能电池可以简单且容易地以低成本制造太阳能电池，同时抑制除了电极区域之外的光接收表面中的表面复合，并且在 发射极以提高太阳能电池的光电转换效率，以及太阳能电池。

公开(公告)号：US08766089B2

公开(公告)日：2014-07-01

申请号：US13559813

申请日：2012-07-27

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H05K3/24 ,  H01L31/0224

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.

摘要翻译： 一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：具有直接连接到所述半导体衬底的第一电极层的多层结构，以及由至少一个 并设置在第一电极层上。 上电极层通过烧结总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量与 相对于上电极层中的总银含量高于第一电极层中的总银含量。

公开(公告)号：US20070215203A1

公开(公告)日：2007-09-20

申请号：US11631480

申请日：2005-06-15

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Haruhiko Kano ,  Masanobu Yano

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Haruhiko Kano ,  Masanobu Yano

IPC分类号： H01L31/00

CPC分类号： H01B1/16 ,  H01L31/022433 ,  Y02E10/50

摘要： The present invention is an electrode material comprising at least, a silver powder, a glass frit, and an organic vehicle, wherein a rate of Ag content of the electrode material is 75 wt % to 95 wt %, and a ratio of contents of Ag grains having an average grain diameter of 0.5 μm to 3 μm and Ag grains having an average grain diameter of 4 μm to 8 μm in the electrode material is (the Ag grains having an average grain diameter of 0.5 μm to 3 μm):(the Ag grains having an average grain diameter of 4 μm to 8 μm)=20-80 wt %:80-20 wt %, and a solar cell comprising an electrode formed by using the electrode material. Thereby, an electrode material that can be stably filled in an electrode groove formed on a semiconductor device and that an electrode with narrow line width and small resistance loss can be easily formed by, and a solar cell with high power having an electrode formed by using the electrode material are provided.

摘要翻译： 本发明是至少包含银粉，玻璃料和有机载体的电极材料，其中电极材料的Ag含量的比例为75重量％〜95重量％，Ag的含量比例 （平均粒径为0.5〜3μm的Ag粒子）:(平均粒径为0.5〜3μm的Ag粒子）（平均粒径为0.5〜3μm的Ag粒子）:(平均粒径为0.5〜3μm的Ag粒子） 平均粒径为4μm〜8μm的Ag粒子）= 20〜80wt％：80〜20wt％，以及包含使用电极材料形成的电极的太阳能电池。 由此，可以容易地形成能够稳定地填充在形成于半导体装置上的电极槽中的电极材料，并且能够容易地形成具有窄线宽度和小电阻损失的电极，并且可以容易地形成具有通过使用电极形成的电极的具有高功率的太阳能电池 提供电极材料。

公开(公告)号：US08141484B2

公开(公告)日：2012-03-27

申请号：US11920766

申请日：2006-05-02

申请人： Satoyuki Ojima ,  Naoki Ishikawa ,  Hiroyuki Ohtsuka

发明人： Satoyuki Ojima ,  Naoki Ishikawa ,  Hiroyuki Ohtsuka

IPC分类号： B41N1/24

CPC分类号： B41F15/34 ,  B41F15/36 ,  B41N1/248 ,  B41P2215/12 ,  H05K3/1225 ,  H05K2203/0545

摘要： A screen printing plate having at least an opening portion that discharges a printing material for forming a target printing pattern on a matter to be printed is provided in screen printing, and the screen printing plate is characterized in that the size of the opening portion is reduced from the target printing pattern and an opening end portion of the opening portion has a projection and recess pattern shaped differently from the target printing pattern shape. By this arrangement, bleeding of the printing material of the screen printing can be controlled and a high-quality and low-cost screen printing plate is provided which can print a target printing pattern accurately and with high transfer performance even for a fine design.

摘要翻译： 在丝网印刷中设置有至少具有排出用于形成待印刷物上形成目标印刷图案的印刷材料的开口部分的丝网印刷板，其特征在于，开口部分的尺寸减小 从目标印刷图案开始，开口部的开口端部具有与目标印刷图案形状不同的凸形凹部图案。 通过这种布置，可以控制丝网印刷的印刷材料的渗色，并且提供了一种高品质和低成本的丝网印刷版，其可以精确地印刷目标印刷图案并且具有高转印性能，即使是精细设计。

公开(公告)号：US07705236B2

公开(公告)日：2010-04-27

申请号：US11631480

申请日：2005-06-15

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Haruhiko Kano ,  Masanobu Yano

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Haruhiko Kano ,  Masanobu Yano

IPC分类号： H01L31/00

CPC分类号： H01B1/16 ,  H01L31/022433 ,  Y02E10/50

摘要： The present invention is an electrode material comprising at least, a silver powder, a glass frit, and an organic vehicle, wherein a rate of Ag content of the electrode material is 75 wt % to 95 wt %, and a ratio of contents of Ag grains having an average grain diameter of 0.5 μm to 3 μm and Ag grains having an average grain diameter of 4 μm to 8 μm in the electrode material is (the Ag grains having an average grain diameter of 0.5 μm to 3 μm):(the Ag grains having an average grain diameter of 4 μm to 8 μm)=20-80 wt %:80-20 wt %, and a solar cell comprising an electrode formed by using the electrode material. Thereby, an electrode material that can be stably filled in an electrode groove formed on a semiconductor device and that an electrode with narrow line width and small resistance loss can be easily formed by, and a solar cell with high power having an electrode formed by using the electrode material are provided.

摘要翻译： 本发明是至少包含银粉，玻璃料和有机载体的电极材料，其中电极材料的Ag含量的比例为75重量％〜95重量％，Ag的含量比例 平均粒径为0.5μm〜3μm的晶粒和电极材料的平均粒径为4μm〜8μm的Ag粒子（平均粒径为0.5μm〜3μm的Ag粒子）:( 平均粒径为4μm〜8μm的Ag粒子）= 20〜80重量％：80〜20重量％，以及包含通过使用电极材料形成的电极的太阳能电池。 由此，可以容易地形成能够稳定地填充在形成于半导体装置上的电极槽中的电极材料，并且能够容易地形成具有窄线宽度和小电阻损失的电极，并且可以容易地形成具有通过使用电极形成的电极的具有高功率的太阳能电池 提供电极材料。

公开(公告)号：US20090243111A1

公开(公告)日：2009-10-01

申请号：US12309923

申请日：2007-08-02

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L23/532 ,  H01L21/283 ,  H01L31/18

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

摘要翻译： 本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构 电极层，由至少一层形成并设置在第一电极层上; 其中上电极层通过焙烧总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量 相对于上电极层中的总银含量高于第一电极层中的总银含量。 结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

公开(公告)号：US08253011B2

公开(公告)日：2012-08-28

申请号：US12309923

申请日：2007-08-02

申请人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Satoyuki Ojima ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Shigenori Saisu ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H01B1/22 ,  C04B41/51

CPC分类号： H05K3/248 ,  H01L31/022425 ,  H05K1/092 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

摘要翻译： 本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构 电极层，由至少一层形成并设置在第一电极层上; 其特征在于，所述上部电极层通过烧成总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量 相对于上电极层中的总银含量高于第一电极层中的总银含量。 结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

公开(公告)号：US20090194151A1

公开(公告)日：2009-08-06

申请号：US12309229

申请日：2007-07-12

申请人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

IPC分类号： H01L31/0224 ,  H01L21/02 ,  H01L21/28 ,  H01L23/48 ,  H01L31/10

CPC分类号： H01L31/022425 ,  C03C8/14 ,  C03C8/18 ,  H01L21/2225 ,  H01L31/05 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

摘要翻译： 本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在 含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。 这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

公开(公告)号：US08319096B2

公开(公告)日：2012-11-27

申请号：US12309229

申请日：2007-07-12

申请人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

发明人： Naoki Ishikawa ,  Hiroyuki Ohtsuka ,  Takenori Watabe ,  Satoyuki Ojima ,  Toyohiro Ueguri

IPC分类号： H01L31/00 ,  H01B1/22 ,  C04B41/51

CPC分类号： H01L31/022425 ,  C03C8/14 ,  C03C8/18 ,  H01L21/2225 ,  H01L31/05 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

摘要翻译： 本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在 含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。 这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。