发明申请
- 专利标题： AGING DEVICE
- 专利标题（中）： 老化设备
-
申请号： US12173535申请日： 2008-07-15
-
公开(公告)号： US20090020803A1公开(公告)日： 2009-01-22
- 发明人: Hiroshi Watanabe , Atsuhiro Kinoshita , Shigeki Kobayashi , Daisuke Hagishima
- 申请人： Hiroshi Watanabe , Atsuhiro Kinoshita , Shigeki Kobayashi , Daisuke Hagishima
- 优先权： JP2007-186343 20070717
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
An aging device according to an embodiment of the present invention includes a semiconductor substrate, first and second diffusion layers provided in a first element region, a floating gate provided above a channel region between the first and second diffusion layers, and a control gate electrode provided beside the floating gate with an interval in the lateral direction. A coupling capacitance between the floating gate and the control gate electrode is larger than a coupling capacitance between the floating gate and the semiconductor substrate.
公开/授权文献
- US07977729B2 Aging device 公开/授权日：2011-07-12
信息查询
IPC分类:
