发明申请
- 专利标题： Integrated Schottky Diode and Power MOSFET
- 专利标题（中）： 集成肖特基二极管和功率MOSFET
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申请号： US11778525申请日： 2007-07-16
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公开(公告)号： US20090020826A1公开(公告)日： 2009-01-22
- 发明人: Wan-Hua Huang , Kuo-Ming Wu , Yi-Chun Lin , Ming Xiang Li
- 申请人： Wan-Hua Huang , Kuo-Ming Wu , Yi-Chun Lin , Ming Xiang Li
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.
公开/授权文献
- US08022446B2 Integrated Schottky diode and power MOSFET 公开/授权日：2011-09-20
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