发明申请
US20090020836A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELECTRIC
有权
制造具有高K栅电介质的半导体器件的方法
- 专利标题： METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELECTRIC
- 专利标题（中）： 制造具有高K栅电介质的半导体器件的方法
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申请号： US12040166申请日： 2008-02-29
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公开(公告)号： US20090020836A1公开(公告)日： 2009-01-22
- 发明人: Mark L. Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin K. Brask , Jack Kavalieros , Matthew V. Metz , Adrian B. Sherrill , Markus Kuhn , Robert S. Chau
- 申请人： Mark L. Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin K. Brask , Jack Kavalieros , Matthew V. Metz , Adrian B. Sherrill , Markus Kuhn , Robert S. Chau
- 主分类号： H01L29/49
- IPC分类号： H01L29/49
摘要：
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
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