发明申请
- 专利标题: HIGH-IMPEDANCE SUBSTRATE
- 专利标题(中): 高阻抗基板
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申请号: US12175854申请日: 2008-07-18
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公开(公告)号: US20090021444A1公开(公告)日: 2009-01-22
- 发明人: Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
- 申请人: Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 优先权: JP2007-188399 20070719
- 主分类号: H01Q1/00
- IPC分类号: H01Q1/00
摘要:
A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2≦h≦t/2 inequality 1.
公开/授权文献
- US07936310B2 High-impedance substrate 公开/授权日:2011-05-03
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