发明申请
- 专利标题: POROUS OBJECT BASED ON SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME
- 专利标题(中): 基于碳化硅的多孔物体及其制造方法
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申请号: US12193961申请日: 2008-08-19
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公开(公告)号: US20090029103A1公开(公告)日: 2009-01-29
- 发明人: Takuya HIRAMATSU , Kenji MORIMOTO
- 申请人: Takuya HIRAMATSU , Kenji MORIMOTO
- 申请人地址: JP Nagoya-city
- 专利权人: NGK INSULATORS, LTD.
- 当前专利权人: NGK INSULATORS, LTD.
- 当前专利权人地址: JP Nagoya-city
- 优先权: JP2006-045417 20060222
- 主分类号: B32B3/12
- IPC分类号: B32B3/12 ; B29C44/00
摘要:
A silicon carbide-based porous article comprising silicon carbide particles as an aggregate, metallic silicon and an aggregate derived from siliceous inorganic particles to form pores through volume shrinkage by heat treatment, wherein the porosity is 45 to 70%, and the average pore diameter is 10 to 20 μm is provided. Also provided is a method for producing a silicon carbide-based porous article, comprising; adding inorganic particles to form pores through volume shrinkage by heat treatment to a raw-material mixture containing silicon carbide particles and metallic silicon, then forming into an intended shape, calcinating and firing the resultant green body, forming pores through volume shrinkage of the inorganic particles by heat treatment, and the shrunk inorganic particles being present as an aggregate in the porous article.
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