- 专利标题: Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
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申请号: US12232433申请日: 2008-09-17
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公开(公告)号: US20090029509A1公开(公告)日: 2009-01-29
- 发明人: Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
- 申请人: Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP5-291268 19931026; JP5-347645 19931224; JP5-347646 19931224
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
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