发明申请
- 专利标题： METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME
- 专利标题（中）： 形成电介质层的方法和制造包括其中的电介质电容器的方法
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申请号： US12183657申请日： 2008-07-31
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公开(公告)号： US20090035877A1公开(公告)日： 2009-02-05
- 发明人: Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
- 申请人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2007-0076678 20070731
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/00
摘要：
A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
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