发明申请
US20090035910A1 Method of Forming The NDMOS Device Body With The Reduced Number of Masks
失效
形成具有减少掩模数量的NDMOS器件主体的方法
- 专利标题： Method of Forming The NDMOS Device Body With The Reduced Number of Masks
- 专利标题（中）： 形成具有减少掩模数量的NDMOS器件主体的方法
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申请号： US11870794申请日： 2007-10-11
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公开(公告)号： US20090035910A1公开(公告)日： 2009-02-05
- 发明人: Michael Church
- 申请人： Michael Church
- 申请人地址： US CA Milipitas
- 专利权人： INTERSIL AMERICAS, INC.
- 当前专利权人： INTERSIL AMERICAS, INC.
- 当前专利权人地址： US CA Milipitas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
This disclosure describes an improved process and resulting structure that allows a single masking step to be used to define both the body and the threshold adjustment layer of the body. The method consists of forming a first mask on a surface of a substrate with an opening exposing a first region of the substrate; implanting through the opening a first impurity of a first conductivity type and having a first diffusion coefficient; and implanting through the opening a second impurity of the first conductivity type and having a second diffusion coefficient lower than the first diffusion coefficient. The first and second impurities are then co-diffused to form a body region of a field effect transistor. The remainder of the device is formed.
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